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參數資料
| 型號： | SPB160N04S2-03 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 297K |
| 代理商： | SPB160N04S2-03 |
2003-05-22
Page 1
SPB160N04S2L-03
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
40
V
m
A
2.7
160
Feature
N-Channel
Enhancement mode
Logic Level
High Current Rating
Low On-Resistance
R
DS(on)
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -7-3
Marking
P2N04L03
Type
SPB160N04S2L-03 P- TO263 -7-3
Package
Ordering Code
Q67060-S6138
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
Value
Unit
A
T
C
=25°C
T
C
=100°C
I
D
160
160
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
640
I
D
=80A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
810
mJ
E
AR
d
v
/d
t
30
I
S
=160A,
V
DS
=32V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
300
V
W
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +175
55/175/56
°C
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