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參數(shù)資料
| 型號： | SPB77N06S2-12 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 311K |
| 代理商： | SPB77N06S2-12 |
2003-05-09
Page 1
SPP77N06S2-12
SPB77N06S2-12
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
55
V
m
A
12
80
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO220 -3-1
Marking
2N0612
2N0612
Type
SPP77N06S2-12
Package
P- TO220 -3-1
Ordering Code
Q67060-S6029
SPB77N06S2-12
P- TO263 -3-2
Q67060-S6030
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
=25°C
I
D
80
56
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
320
I
D=77A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
1)
Reverse diode d
v
/d
t
E
AS
280
mJ
E
AR
d
v
/d
t
16
6
I
S=77A,
V
DS
=44V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
kV/μs
V
GS
P
tot
±20
158
V
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
T
j ,
T
stg
-55... +175
55/175/56
°C
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