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參數資料
| 型號： | SPBI11N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS Power Transistor |
| 中文描述： | 酷MOS功率晶體管 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 193K |
| 代理商： | SPBI11N60C3 |
2001-07-05
Page 1
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Cool MOS
=
Power Transistor
C
O L
MOS
Feature
=
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
=
Periodic avalanche rated
Extreme d
v
/d
t
rated
=
High peak current capability
=
Improved transconductance
=
150 °C operating temperature
Product Summary
V
DS
@ T
jmax
R
DS(on)
I
D
650
0.38
11
V
A
P-TO262-3-1
P-TO220-3-1
P-TO263-3-2
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Value
11
7
Unit
A
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D puls
E
AS
33
340
I
D
=5.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax1)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
mJ
E
AR
0.6
I
AR
d
v
/d
t
11
6
A
I
S
=11A,
V
DS
<
=
V
DD
, d
i
/d
t
=100A/μs,
T
jmax
=150°C
Gate source voltage static
Gate source voltage dynamic
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V/ns
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
125
V
W
°C
-55... +150
相關PDF資料 |
PDF描述 |
|---|---|
| SPI11N60C3 | Cool MOS Power Transistor |
| SPP11N60C3 | Cool MOS Power Transistor |
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| SPI11N60S5 | Cool MOS⑩ Power Transistor |
| SPB11N60C2 | Cool MOS⑩ Power Transistor |
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