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參數資料
| 型號： | SPD07N20 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 120K |
| 代理商： | SPD07N20 |
Data Sheet
1
05.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
200
0.4
7
V
DS
R
DS(on)
I
D
V
A
Features
N channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
Pin 1
G
Pin 2
D
Pin 3
S
Packaging
Tape and Reel
Tube
Type
SPD07N20
SPU07N20
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4120-A2
Q67040-S4112-A2
Maximum Ratings
, at
T
j = 25 C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 C
T
C
= 100 C
Pulsed drain current
T
C
= 25 C
Avalanche energy, single pulse
I
D
= 7 A,
V
DD
= 50 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 7 A,
V
DS
= 160 V, d
i
/d
t
= 200 A/μs,
T
jmax
= 175 C
Gate source voltage
Power dissipation
T
C
= 25 C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
Unit
A
Value
7
4.5
I
D
I
Dpulse
28
mJ
E
AS
120
4
6
kV/μs
E
AR
d
v
/d
t
V
GS
P
tot
±
20
40
V
W
T
j ,
T
stg
C
-55... +175
55/150/56
Preliminary Data
SPD 07N20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SPD07N20 G | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD07N20_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS?? Power Transistor Features N channel Enhancement mode Avalanche rated |
| SPD07N20G | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| SPD07N20GBTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) TO-252 T/R 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 200V 7A TO252 |
| SPD07N20GXT | 制造商:Infineon Technologies AG 功能描述: |
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