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參數資料
| 型號： | SPD30N03S2L-08 |
| 廠商： | SIEMENS AG |
| 英文描述： | OptiMOSPower-Transistor( MOS 型功率晶體管) |
| 中文描述： | 的OptiMOS功率晶體管（馬鞍山型功率晶體管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 90K |
| 代理商： | SPD30N03S2L-08 |
2000-05-03
Page 1
SPD30N03S2L-08
Preliminary data
OptiMOS
=
Power-Transistor
Features
N-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
=
175°C operating temperature
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
V
DS
R
DS(on)
I
D
30
7.5
30
V
m
A
Pin 1
G
PIN 2
D
PIN 3
S
Type
SPD30N03S2L-08 P-TO252
Package
Ordering Code
Q67042-S4031
Marking
N03L08
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25°C ,
1)
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 30 A ,
V
DD
= 25 V,
R
GS
= 25
Reverse diode d
v
/d
t
I
S
= 30 A,
V
DS
= 24 V, d
i
/d
t
= 200 A/μs,
T
jmax
= 175 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
Value
30
30
Unit
A
I
D
I
D puls
120
E
AS
250
mJ
d
v
/d
t
6
kV/μs
V
GS
P
tot
±20
125
V
W
T
j ,
T
stg
-55...+175
55/175/56
°C
1Current limited by bondwire; with an
R
thJC
= 1.2 K/W the chip is able to carry
I
D
= 91 A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SPD30N03S2L-10 | 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD30N03S2L-10 G | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD30N03S2L-10_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature N-Channel Enhancement mode |
| SPD30N03S2L10BUMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 30A DPAK |
| SPD30N03S2L-10G | 制造商:Infineon Technologies AG 功能描述: |
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