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參數資料
| 型號： | SPD50N03S2-07 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 261K |
| 代理商： | SPD50N03S2-07 |
2003-05-09
Page 1
SPD50N03S2-07
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
30
V
m
A
7.3
50
Feature
N-Channel
Enhancement mode
Excellent Gate Charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO252 -3-11
Marking
PN0307
Type
SPD50N03S2-07
Package
P- TO252 -3-11 Q67040-S4430
Ordering Code
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
Value
Unit
A
T
C
=25°C
I
D
50
50
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
200
I
D
=50 A ,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
250
mJ
E
AR
d
v
/d
t
13
I
S
=50A,
V
DS
=24V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
136
V
W
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
-55... +175
55/175/56
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SPD50N03S2-07 G | 功能描述:MOSFET POWER MOSFET DISCRETE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPD50N03S2-07_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated |
| SPD50N03S2-07G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated |
| SPD50N03S207GBTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 T/R 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 50A TO252-3 |
| SPD50N03S207GXT | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 50A TO252-3 |
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