- 您現在的位置：買賣IC網 > PDF目錄374885 > SPI20N65C3 (INFINEON TECHNOLOGIES AG) Cool MOS⑩ Power Transistor PDF資料下載
參數資料
| 型號： | SPI20N65C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 784K |
| 代理商： | SPI20N65C3 |
2003-0
8
-
15
Page 1
SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.19
V
A
20.7
P-TO262-3-1
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
20N65C3
20N65C3
20N65C3
Type
SPP20N65C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4556
SPA20N65C3
P-TO220-3-31 Q67040-S4555
SPI20N65C3
P-TO262-3-1
Q67040-S4560
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20.7
13.1
20.7
1)
13.1
1)
A
I
D puls
E
AS
62.1
62.1
A
I
D
=3.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
690
690
mJ
E
AR
1
1
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
7
7
A
±20
±
30
208
±20
±
30
34.5
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_I
-55...+150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| SPP20N65C3 | Cool MOS⑩ Power Transistor |
| SPB02N60C3 | Cool MOS™ Power Transistor |
| SPB02N60S5 | Cool MOS⑩ Power Transistor |
| SPP02N60C3 | Cool MOS™ Power Transistor |
| SPP02N60S5 | Cool MOS⑩ Power Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SPI20N65C3HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
| SPI20N65C3XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20.7A TO-262 |
| SPI21N10 | 功能描述:MOSFET N-CH 100 V 21 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI21N50C3 | 功能描述:MOSFET COOL MOS PWR TRANS MAX 560V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI21N50C3-E3046 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 T/R |
發布緊急采購，3分鐘左右您將得到回復。