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參數(shù)資料
型號: SPN1026S56RG
英文描述: Dual N-Channel Enhancement Mode MOSFET
中文描述: 雙N溝道增強(qiáng)型MOS管
文件頁數(shù): 1/9頁
文件大小: 267K
代理商: SPN1026S56RG
DESCRIPTION
The SPN1026 is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide
rugged,
reliable,
performance. They can be used in most applications
requiring up to 320mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
2006/12/18
Ver.2
Page 1
SPN1026
Dual N-Channel Enhancement Mode MOSFET
APPLICATIONS
z
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
z
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
z
Battery Operated Systems
z
Solid-State Relays
and
fast
switching
FEATURES
60V/0.50A , R
DS(ON)
= 4.0
@V
GS
=10V
60V/0.30A , R
DS(ON)
= 5.0
@V
GS
=5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 / SC-89-6L package design
PIN CONFIGURATION( SOT-563 / SC-89-6L )
PART MARKING
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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