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參數資料
| 型號： | SPP03N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 308K |
| 代理商： | SPP03N60S5 |
2003-10-02
Page 1
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
650
V
A
1.4
3.2
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
03N60C3
03N60C3
03N60C3
Type
SPP03N60C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4401
SPB03N60C3
P-TO263-3-2
Q67040-S4391
SPA03N60C3
P-TO220-3-31 -
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
3.2
2
3.2
1)
2
1)
A
I
D puls
E
AS
9.6
9.6
A
I
D
=2.4A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=3.2A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
100
100
mJ
E
AR
0.2
0.2
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
3.2
3.2
A
±20
±
30
38
±20
±
30
29.7
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_B
-55...+150
°C
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| SPP03N60S5_03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS™ Power Transistor |
| SPP03N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP03N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 3.2A TO-220AB |
| SPP03N60S5XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
| SPP04N50C3 | 功能描述:MOSFET COOL MOS N-CH 500V 4.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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