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參數資料
| 型號： | SPP06N80C2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS Power Transistor |
| 中文描述： | 酷MOS功率晶體管 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 130K |
| 代理商： | SPP06N80C2 |
2000-05-29
Page 1
SPP06N80C2
Preliminary data
Cool MOS
Power Transistor
C
Power Semiconductors
O L
MOS
Feature
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dvdt rated
·
Ultra low effective capacitances
·
Improved noise immunity
Product Summary
V
DS
R
DS(on)
I
D
800
900
6
V
m
W
A
P-TO220-3-1
Type
SPP06N80C2
Package
P-TO220-3-1
Ordering Code
Q67040-S4351
Marking
SPP06N80C2
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
6
3.8
Unit
A
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current, t
p
limited by T
jmax
Avalanche energy, single pulse
I
D
I
D puls
E
AS
18
230
I
D
=1.5A,
V
DD
=50V
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
=6A,
V
DD
=50V
Avalanche current, repetitive t
AR
limited by T
jmax
Reverse diode dvdt
mJ
E
AR
0.2
I
AR
dvdt
6
6
A
V/ns
I
S
=6A,
V
DS
<
V
DD
,
didt
=100A/μs,
T
jmax
=150°C
Gate source voltage
Power dissipation
V
GS
P
tot
±20
83
V
W
T
C
= 25 °C
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
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| SPP06N80C3 | 功能描述:MOSFET COOL MOS N-CH 800V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SPP07N600S5 | 制造商:Infineon Technologies AG 功能描述: |
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