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參數(shù)資料
| 型號(hào)： | SPP11N80C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 253K |
| 代理商： | SPP11N80C3 |
2003-07-02
Page 1
SPP11N80C3
SPA11N80C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
R
DS(on)
I
D
800
V
A
0.45
11
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
11N80C3
11N80C3
Type
SPP11N80C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4438
SPA11N80C3
P-TO220-3-31 Q67040-S4439
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
11
7.1
11
1)
7.1
1)
A
I
D puls
E
AS
33
33
A
I
D
=2.2A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
470
470
mJ
E
AR
0.2
0.2
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
11
11
A
±20
±
30
156
±20
±
30
41
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP
-55...+150
°C
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