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參數資料
| 型號： | SPP35N10 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power-Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 480K |
| 代理商： | SPP35N10 |
2002-01-31
Page 1
Preliminary data
SPI35N10
SPP35N10,SPB35N10
SIPMOS
Power-Transistor
Feature
N-Channel
Product Summary
V
DS
R
DS(on)
I
D
100
V
44
m
35
A
Enhancement mode
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P-TO263-3-2
P-TO220-3-1
P-TO262-3-1
Marking
35N10
35N10
35N10
Type
SPP35N10
Package
P-TO220-3-1
Ordering Code
Q67042-S4123
SPB35N10
P-TO263-3-2
Q67042-S4103
SPI35N10
P-TO262-3-1
Q67042-S4124
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
=25°C
T
C
=100°C
I
D
35
26.4
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
140
I
D
=35 A ,
V
DD
=25V,
R
GS
=25
Reverse diode d
v
/d
t
E
AS
245
mJ
I
S
=35A,
V
DS
=80V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
d
v
/d
t
6
kV/μs
V
GS
P
tot
±20
150
V
Power dissipation
T
C
=25°C
Operating and storage temperature
W
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
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