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參數(shù)資料
| 型號(hào)： | SPPBI07N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 332K |
| 代理商： | SPPBI07N60S5 |
2004-03-30
Rev. 2.1
Page 1
SPP07N60S5, SPB07N60S5
SPI07N60S5
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
V
DS
R
DS(on)
I
D
600
0.6
V
A
7.3
P-TO262
P-TO220-3-1
P-TO263-3-2
2
P-TO220-3-1
23
1
Type
SPP07N60S5
Package
P-TO220-3-1
Ordering Code
Q67040-S4172
SPB07N60S5
P-TO263-3-2
Q67040-S4185
SPI07N60S5
P-TO262
Q67040-S4328
Marking
07N60S5
07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= - A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 7.3 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
I
D
7.3
4.6
I
D puls
E
AS
14.6
230
mJ
E
AR
0.5
7.3
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
83
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55... +150
°C
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