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參數(shù)資料
| 型號： | SPU01N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 279K |
| 代理商： | SPU01N60C3 |
2004-03-01
Page 1
SPU01N60C3
SPD01N60C3
Rev. 2.0
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
V
DS
@
T
jmax
R
DS(on)
I
D
650
V
A
6
0.8
P-TO251-3-1
P-TO252
Type
SPU01N60C3
Package
P-TO251-3-1
Ordering Code
Q67040-S4193
SPD01N60C3
P-TO252
Q67040-S4188
Marking
01N60C3
01N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 0.6 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 0.8 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
I
D
0.8
0.5
I
D puls
E
AS
1.6
20
mJ
E
AR
0.01
0.8
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
11
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55... +150
°C
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