- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385860 > SR706 (Polyfet RF Devices) SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | SR706 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | SR706 |
polyfet rf devices
SR706
13
Push - Pull
AR
192.0
18.0
300.0
0.35 C/W
65
7.2
42.00
6.0
55
0.16
15.00
27.0
465
0.60
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
1.20
120.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
1.20
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 1.20
225
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
225
225
Common Source Input Capacitance
70
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS ( 300.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
300.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
28.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 03/28/2001
25 C )
WATTS OUTPUT )
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SRA Series | SRAM Memory Card 256KB Through 8MB(256KB - 8MB靜態(tài)RAM存儲器卡) |
| SRA1020 | Schottky Barrier Rectifier |
| SRA1030 | Schottky Barrier Rectifier |
| SRA1040 | Schottky Barrier Rectifier |
| SRA1060 | Schottky Barrier Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SR708 | 制造商:EDSYN 功能描述: |
| SR70-LF-T7 | 制造商:ProTek Devices 功能描述:ESD Suppressor Diode Arrays 15KV 4-Pin(3+Tab) SOT-143 T/R 制造商:ProTek Devices 功能描述:SR70 Series 2 Channel 10 pF 1.5 Vf Steering Diode Array - SOT-143 |
| SR-70-NA-1.3-KIT | 功能描述:SKYEREADER SR70 READER MODULE RoHS:是 類別:RF/IF 和 RFID >> RFID 讀取模塊 系列:SkyeModule™ SR70 產(chǎn)品目錄繪圖:DLP-RFID-UHF1B 標(biāo)準(zhǔn)包裝:1 系列:- RF 型:讀/寫 頻率:900MHz 特點:ISO 18000-6 a/b/c 封裝/外殼:模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 產(chǎn)品目錄頁面:635 (CN2011-ZH PDF) 其它名稱:813-1029 |
| SR70-T13 | 制造商:PROTEC 制造商全稱:Protek Devices 功能描述:STEERING DIODE ARRAY |
| SR70-T7 | 制造商:PROTEC 制造商全稱:Protek Devices 功能描述:STEERING DIODE ARRAY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。