
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0129F
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SRM__ UF __ __
└ Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
__ = Axial
SMS = Surface Mount Square Tab
BTR = Button
│
└ Voltage
6 = 600 V
8 = 800 V
10 = 1000V
12 = 1200V
SRM6UF thru SRM12UF
Series
20 AMP
Ultra Fast Rectifier
600-1200 Volts
75 nsec
Features:
Replaces DO-4 and DO-5
Ultra Fast Recovery
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
3/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Equivalent to 1N6690-1N6693
TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM6UF
SRM8UF
SRM10UF
SRM12UF
VRRM
VRWM
VR
600
800
1000
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave, Axial Tc
≤55°C; SMS/BTR Tc≤100°C )
IO
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, TA=25
oC)
IFSM
375
Amps
Operating and Storage Temperature
Top & Tstg
-65 to +175
oC
Maximum Thermal Resistance
(Axial – Junction to Lead, L=1/8”)
(SMS – Junction to End Tab)
(Button – Junction to Case)
Axial ( )
Square Tab (SMS)
Button (BTR)
RθJL
RθJE
RθJC
3.4
2.5
1.0
oC/W
Notes:
1/ For ordering information, price, operating curves, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
Axial
SMS
Button