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參數資料
| 型號： | SRM2AW416LLBT |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | Super Low Voltage and Low Current Consumption、4M-Bit（262,144Words x 16-Bit）Asynchronous Static RAM(超低電壓和小電流、4M位（262,144字 x 16位）異步靜態RAM) |
| 中文描述： | 超級低電壓和低電流消耗，4分位（262144字× 16位）異步靜態RAM（超低電壓和小電流，4分位（262144字× 16位）異步靜態RAM）的 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 127K |
| 代理商： | SRM2AW416LLBT |
Rev.1.4
1
I
DESCRIPTION
The SRM2AW416LLBT
1/7
is a 262,144words x 16-bit asynchronous, random access memory on a monolithic
CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing
circuit. It is possible to control the data width by the data byte control. Both the Input and output ports are TTL
compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the
SRM2AW416LLBT
1/7
is from –40 to 85
°
C, and it is suitable for the industrial products.
I
FEATURES
G
Fast Access time........................ 100ns (at 1.8V) / 70ns (at 2.2V)
G
Low supply current ..................... LL Version
G
Completely static........................ No clock required
G
Supply voltage............................ 1.8V to 3.0V
G
TTL compatible inputs and outputs
G
3-state output with wired-OR capability
G
Non-volatile storage with back-up batteries
G
Package ..................................... SRM2AW416LLBT
TFBGA-48 pin (Tape CSP)
I
BLOCK DIAGRAM
I/O Buffer
16
I/O1
I/O16
CS
OE
WE
LB
UB
O
C
L
C
C
L
10
8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A
Memory Cell Array
1024 x 256 x 16
Column Gate
1024
256
256x16
X
Y
PF990-09
SRM2AW416LLBT
1/7
4M-bit Static RAM
G
Super Low Voltage Operation and Low Current Consumption
G
Access Time 100ns (1.8V) / 70ns (2.2V)
G
262,144 Words x 16-bit Asynchronous
G
Wide Temperature Range
Supe LowVotage
Poducs
Opeaion
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