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參數資料
型號: SRT110
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 1.0 AMP. Schottky Barrier Rectifiers
中文描述: 1.0安培。肖特基
文件頁數: 1/2頁
文件大小: 61K
代理商: SRT110
- 88 -
SRT12
THRU
SRT110
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
TS-1
Features
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
High temperature soldering guaranteed:
260
/10seconds, 0.375” (9.5mm) lead length at 5 lbs.
(2.3 kg) tension
Mechanical Data
Cases: Molded plastic body
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.20 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
SRT
12
20
14
20
SRT
13
30
21
30
SRT
14
40
28
40
SRT
15
50
35
50
SRT
16
60
42
60
SRT
19
90
63
90
SRT
110
100
70
100
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
at Rated DC Blocking Voltage @ T
A
=100
V
RM
V
RMS
V
DC
Io
V
V
V
1.0
A
I
FSM
25.0
A
V
F
0.55
0.70
0.80
0.05
-
V
mA
mA
/W
pF
I
R
0.5
10.0
Typical Thermal Resistance (Note 1)
R
θ
JA
Cj
T
J
T
STG
50
Typical Junction Capacitance ( Note 2 )
Operating Junction Temperature Range
110
80
-65 to + 150
28
- 65 to + 125
Storage Temperature Range
Notes:
1. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
2. Measured at 1.0 MHz and Applied V
R
=4.0 Volts
- 65 to + 150
相關PDF資料
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