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參數資料
型號: SS10P2CL-M3/86A
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 20 V, SILICON, RECTIFIER DIODE, TO-277A
封裝: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN
文件頁數: 1/5頁
文件大小: 92K
代理商: SS10P2CL-M3/86A
Document Number: 89036
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 10-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Dual Common-Cathode Schottky Rectifiers
SS10P2CL, SS10P3CL
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
20 V, 30 V
IFSM
200 A
EAS
20 mJ
VF at IF = 5 A
0.338 V
TJ max.
150 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10P2CL
SS10P3CL
UNIT
Device marking code
S102CL
S103CL
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (fig. 1)
total device
IF(AV)
10
A
per diode
5.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關PDF資料
PDF描述
SS12-TS01 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS14-TS01 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC
SS12-TS01P 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
SS14-TS01P 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC
SS1200-LT-TP 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
相關代理商/技術參數
參數描述
SS10P3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P3_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
SS10P3C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers
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SS10P3C-E3/86A 功能描述:肖特基二極管與整流器 10 Amp 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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