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參數資料
| 型號： | SS1H9-HE3/5AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 91K |
| 代理商： | SS1H9-HE3/5AT |
Vishay General Semiconductor
SS1H9 & SS1H10
Document Number 88747
07-Jul-06
www.vishay.com
1
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V to 100 V
IFSM
50 A
VF
0.62 V
IR
1.0 A
Tj max.
175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1H9
SS1H10
UNIT
Device marking code
S9
S10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
A
Storage temperature range
TSTG
- 65 to + 175
°C
Maximum operating temperature
TJ
175
°C
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