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參數資料
| 型號： | SS22-S100 |
| 英文描述： | (29.89 k) |
| 中文描述： | （29.89十一） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | SS22-S100 |
SS12 – S100
14-1 1999 Won-Top Electronics
SS12 – S100
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
!
Ideally Suited for Automatic Assembly B
!
Low Power Loss, High Efficiency
!
Surge Overload Rating to 30A Peak D
!
For Use in Low Voltage Application A
!
Guard Ring Die Construction F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
!
Case: Low Profile Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
SS12
SS13
SS14
SS15
SS16
SS18
SS19
S100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
80
90
100
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
56
64
71
V
Average Rectified Output Current @T
L
= 75°C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
30
A
Forward Voltage @I
F
= 1.0A
V
FM
0.55
0.70
0.85
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
0.5
20
μA
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
88
K/W
Operating Temperature Range
T
j
-65 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Note: 1. Mounted on P.C. Board with 5.0mm
2
copper pad areas
W TE
POWER SEMICONDUCTORS
SMA/DO-214AC
Min
2.50
4.00
1.40
0.152
4.80
2.00
0.051
0.76
All Dimensions in mm
Dim
A
B
C
D
E
F
G
H
Max
2.90
4.60
1.60
0.305
5.28
2.44
0.203
1.52
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