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參數(shù)資料
| 型號： | SS39 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.0 Ampere Schottky Barrier Rectifiers |
| 中文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | SMC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | SS39 |
S
SS32 - S310, Rev. B1
Features
Metal to silicon rectifiers, majority
carrier conduction.
Low forward voltage drop.
Easy pick and place.
High surge current capability.
SS32 - S310
3.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 75
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient**
Thermal Resistance, Junction to Case
Storage Temperature Range
Operating Junction Temperature
3.0
A
i
f(surge)
100
A
P
D
2.27
18
55
17
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JC
T
stg
T
J
-55 to +150
-55 to +150
1999 Fairchild Semiconductor Corporation
SMC/DO-214AB
2
1
0.320 (8.128)
0.305 (7.747)
0.280 (7.112)
0.260 (6.604)
0.103 (2.616)
0.079 (2.007)
0.245 (6.223)
0.220 (5.588)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.124 (3.150)
0.108 (2.743)
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
Parameter
Device
Units
32
20
14
20
33
30
21
30
34
40
28
40
35
50
35
50
36
60
42
60
38
80
56
80
39
90
63
90
310
100
70
100
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
T
A
= 25
°
C
@ rated V
R
Maximum Forward Voltage @ 3.0 A
0.5
mA
mA
mV
T
A
= 100
°
C
20
500
10
750
850
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