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參數資料
| 型號： | SS8550D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. |
| 中文描述： | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | SS8550D |
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
S
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
h
FE3
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
Base-Emitter on Voltage
C
ob
Output Capacitance
h
FE
Classification
Classification
h
FE2
Parameter
Ratings
-40
-25
-6
-1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°
C
°
C
Test Condition
I
C
= -100
μ
A, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -1V, I
C
= -10mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -50mA
Min.
-40
-25
-6
Typ.
Max.
Units
V
V
V
nA
nA
-100
-100
DC Current Gain
45
85
40
170
160
80
-0.28
-0.98
-0.66
15
300
-0.5
-1.2
-1.0
V
V
V
pF
f
T
Current Gain Bandwidth Product
100
200
MHz
B
C
D
85 ~ 160
120 ~ 200
160 ~ 300
1. Emitter 2. Base 3. Collector
SS8550
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
Complimentary to SS8050
Collector Current: I
C
=1.5A
Collector Power Dissipation: P
C
=2W (T
C
=25
°
C)
TO-92
1
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