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參數資料
| 型號： | SSF45N20A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直|第26A條（?。﹟對247VAR |
| 文件頁數： | 1/7頁 |
| 文件大小： | 254K |
| 代理商： | SSF45N20A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 200V
Low R
DS(ON)
: 0.054 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
)
)
)
Characteristic
Value
200
26.4
16.7
180
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
30
+
_
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
o
C/W
θ
SSF45N20A
BV
DSS
= 200 V
R
DS(on)
= 0.065
I
D
= 26.4 A
697
26.4
10
5.0
100
0.8
- 55 to +150
300
1.25
40
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSF45N20B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| SSF45N20B_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSF4604 | 制造商:SILIKRON 制造商全稱:SILIKRON 功能描述:High Power and current handing capability |
| SSF4606 | 制造商:SILIKRON 制造商全稱:SILIKRON 功能描述:High Power and current handing capability |
| SSF4703 | 制造商:SILIKRON 制造商全稱:SILIKRON 功能描述:DC-DC conversion applications |
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