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參數資料
| 型號： | SSH10N60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 10 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 243K |
| 代理商： | SSH10N60A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
Low R
DS(ON)
: 0.646 (Typ.)
(Max.) @ V
DS
= 600V
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
R
R
JC
θ
CS
θ
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
600
10
6.3
40
30
545
10
19.3
3.0
193
1.54
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-3P
1.Gate 2. Drain 3. Source
3
2
1
SSH10N60A
BV
DSS
= 600 V
R
DS(on)
= 0.8
I
D
= 10 A
- 55 to +150
300
0.65
--
40
--
0.24
--
+
_
O
1
O
O
1
O
1
2
O
3
C
o
C
o
C
o
C
θ
μ
A
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料 |
PDF描述 |
|---|---|
| SSH11N90 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | TO-247VAR |
| SSH15N55 | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 15A I(D) | TO-247VAR |
| SSH15N60 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15A I(D) | TO-247VAR |
| SSH17N55 | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17A I(D) | TO-247VAR |
| SSH17N60A | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | TO-247VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SSH10N60B | 功能描述:MOSFET N-Ch/600V/10a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSH10N70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 10A I(D) | TO-247VAR |
| SSH10N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) | TO-247VAR |
| SSH10N80A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-CHANNEL POWER MOSFET |
| SSH10N90A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247VAR |
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