欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: SSI7N60B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 600V N-Channel MOSFET
中文描述: 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝: I2PAK-3
文件頁數(shù): 1/9頁
文件大小: 656K
代理商: SSI7N60B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
S
SSW7N60B / SSI7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
7.0A, 600V, R
DS(on)
= 1.2
@V
GS
= 10 V
Low gate charge ( typical 38 nC)
Low Crss ( typical 23 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSW7N60B / SSI7N60B
600
7.0
4.4
28
±
30
420
7.0
14.7
5.5
3.13
147
1.18
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
!
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
0.85
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
!
!
!
!
!
!
"
!
S
!
!
!
#
D
G
D
2
-PAK
SSW Series
I
2
-PAK
SSI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
ST10F269Z2Q3 122 x 32 pixel format, Compact LCD size
ST10F269Z2Q6 122 x 32 pixel format, Compact LCD size
ST10F269Z2QX 122 x 32 pixel format, Compact LCD size
ST10F273 16-bit MCU with MAC unit, up to 832 Kbytes Flash memory and up to 68 Kbytes RAM
ST10F276 16-bit MCU with MAC unit, up to 832 Kbytes Flash memory and up to 68 Kbytes RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSI7N60BTU 功能描述:MOSFET 600V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSI80C50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer
SSI80C60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phoneme Speech synthesizer
SSI8901 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER
SSI-8901 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OPTOCOUPLER 10KV ISOLATION
主站蜘蛛池模板: 莆田市| 白朗县| 和林格尔县| 揭东县| 东明县| 通州市| 儋州市| 宿松县| 青田县| 五莲县| 天台县| 措美县| 禹城市| 汝南县| 镇平县| 江油市| 许昌市| 南召县| 麻江县| 绵阳市| 宜州市| 会泽县| 沙河市| 双江| 温州市| 肇东市| 阜南县| 汤阴县| 江陵县| 扬中市| 长治县| 方正县| 佛冈县| 阿拉善盟| 台北县| 锡林浩特市| 射阳县| 松滋市| 五原县| 紫云| 红桥区|