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參數資料
| 型號： | SSM1N45B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 450V N-Channel MOSFET |
| 中文描述： | 0.5 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 639K |
| 代理商： | SSM1N45B |
2004 Fairchild Semiconductor Corporation
S
Rev. A, May 2004
SSM1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
0.5A, 450V, R
DS(on)
= 4.25
@V
GS
= 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage
±
50V guaranteed
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSM1N45B
450
0.5
0.32
4.0
±
50
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Power Dissipation (T
L
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
Parameter
Typ
--
Max
63
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
(Note 6b)
●
●
●
●
●
▲
▲
!
S
!
!
!
D
G
SOT-223
SSM Series
G
D
S
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