- 您現在的位置：買賣IC網 > PDF目錄374932 > SSM3K7002FU (Toshiba Corporation) High Speed Switching Applications PDF資料下載
參數資料
| 型號： | SSM3K7002FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 168K |
| 代理商： | SSM3K7002FU |
SSM3K7002FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
3.3
Ω
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
Ω
(max) (@V
GS
=
5 V)
: R
on
=
3.0
Ω
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
60
V
Gate-Source voltage
±
20
V
DC
200
Drain current
Pulse
800
mA
Drain power dissipation (Ta
=
25°C)
150
mW
Channel temperature
150
°C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.6mm
2
×
3)
55~150
°C
Marking
Equivalent Circuit
(top view)
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1
2
3
1.25 ± 0.1
0
1
0
0
2.1± 0.1
2
0
0
0
0
+
+
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
0.6 mm
1.0 mm
NC
1
2
3
1
2
USM
1. GATE
2. SOURCE
3. DRAIN
相關PDF資料 |
PDF描述 |
|---|---|
| SSM40N03P | N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM4K27CT | Switching Applications |
| SSM5G01TU | DC-DC Converter for DSCs and Camcorders |
| SSM5G02TU | DC-DC Converter |
| SSM5G04TU | DC-DC Converter |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SSM3K7002FU(T5L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CHANNEL 60V USM 制造商:Toshiba America Electronic Components 功能描述:Tr., S-MOS, Nch, 60V/0.2A, SC-70 制造商:Toshiba 功能描述:TRANSISTOR |
| SSM3K7002FUT5LF | 功能描述:MOSFET Small-signal MOSFET 60V, 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM40N03P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM40P03GH | 制造商:SSC 制造商全稱:Silicon Standard Corp. 功能描述:P-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
| SSM40P03GJ | 制造商:SSC 制造商全稱:Silicon Standard Corp. 功能描述:P-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
發布緊急采購，3分鐘左右您將得到回復。