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參數資料
| 型號： | SSM6K22FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開關應用 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 300K |
| 代理商： | SSM6K22FE |
SSM6K22FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
Ⅲ
)
SSM6K22FE
High Current Switching Applications
DC-DC Converter
Suitable for high-density mounting due to compact package
Low on resistance:
R
on
= 170 m
(max) (@V
GS
= 4.0 V)
R
on
= 230 m
(max) (@V
GS
= 2.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
12
V
DC
I
D
1.4
Drain current
Pulse
I
DP
5.6
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking Equivalent Circuit (Top View)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1,2,5,6
: Drain
3
: Gate
4 : Source
JEDEC
-
JEITA
-
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
6
KD
4
1
2
3
5
4
1
2
3
6
5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSM6K22FE(TE85L,F) | 功能描述:MOSFET Vds=20V Id=1.4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K24FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K24FE(TE85L,F) | 功能描述:MOSFET Vds=30V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K25FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K25FE(TE85L,F) | 功能描述:MOSFET Vds=20V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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