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參數(shù)資料
| 型號(hào)： | SSM6N16FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications Analog Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 143K |
| 代理商： | SSM6N16FE |
SSM6N16FE
2001-12-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications
Analog Switching Applications
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
(max) (@V
GS
= 4 V)
: R
on
= 4.0
(max) (@V
GS
= 2.5 V)
: R
on
=
1
5
(max) (@V
GS
=
1
.5 V)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta 25°C)
P
D
(Note)
150
mW
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note: Total rating, mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.135 mm
2
6)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
D S
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
0
0.3 mm
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