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參數(shù)資料
| 型號： | SSM6P15FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 196K |
| 代理商： | SSM6P15FE |
SSM6P15FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FE
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance : R
on
=
12
Ω
(max) (@V
GS
=
4 V)
: R
on
=
32
Ω
(max) (@V
GS
=
2.5 V)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
30
V
Gate-Source voltage
±
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
6)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 0.003g(typ.)
D Q
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
0.3 mm
0
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|---|---|
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