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參數(shù)資料
| 型號(hào)： | SSM6P54TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 185K |
| 代理商： | SSM6P54TU |
SSM6P54TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○
High-Speed Switching Applications
○
Power Management Switch Applications
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : R
on
= 228 m
(max) (@ V
GS
= -2.5 V)
: R
on
= 350 m
(max) (@ V
GS
= -1.8 V)
: R
on
= 555 m
(max) (@ V
GS
= -1.5 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
-20
V
Gate-Source voltage
±
8
V
DC
-1.2
Drain current
Pulse
-2.4
A
Drain power dissipation
500
mW
Channel temperature
150
°
C
°
C
Storage temperature range
55 ~ 150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
+8 V
V
DS
=
20 V, V
GS
= 0
V
GS
=
±
8 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
-3 V, I
D
=
-0.6 A
I
D
=
-0.6 A, V
GS
=
-2.5 V (Note 2)
I
D
=
-0.6 A, V
GS
=
-1.8 V (Note 2)
I
D
=
-0.1 A, V
GS
=
-1.5 V (Note 2)
20
12
Drain-Source breakdown voltage
V
Drain cut-off current
0.3
10
±
1
1.0
μ
A
μ
A
Gate leakage current
Gate threshold voltage
V
Forward transfer admittance
(Note 2)
1.7
3.4
S
162
228
212
350
Drain-Source on-resistance
R
DS (ON)
249
555
m
Ω
Input capacitance
C
iss
C
oss
C
rss
331
Output capacitance
48
Reverse transfer capacitance
V
DS
=
10 V, V
GS
=
0
f
=
1 MHz
39
pF
Turn-on time
t
on
19
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.6 A
V
GS
=
0 ~
2.5 V, R
G
=
4.7
Ω
18
ns
Total gate charge
Q
g
Q
gs
Q
gd
V
DSF
7.7
Gate-Source charge
4.9
Gate-Drain charge
V
DS
=
16 V, I
DS
=
-1.2 A,
V
GS
=
4 V
2.8
nC
Drain-Source forward voltage
I
D
=
1.2 A, V
GS
=
0
(Note 2)
0.8
1.2
V
Unit : mm
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Note 2:
Pulse test
1.Sorce1
2.Gate1
3.Drain2
4.Source 2
5.Gate2
6.Drain1
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
0
5
4
+
0
+
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