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參數資料
| 型號： | SSN1N45B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 450V N-Channel MOSFET |
| 中文描述： | 500 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 667K |
| 代理商： | SSN1N45B |
2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
S
SSN1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
0.5A, 450V, R
DS(on)
= 4.25
@V
GS
= 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage
±
50V guaranteed
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SSN1N45B
450
0.5
0.32
4.0
±
50
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Power Dissipation (T
L
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ
--
--
Max
50
140
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
●
●
●
●
●
▲
!
S
!
!
!
D
G
TO-92
SSN Series
S
D
G
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSN1N45BBU | 功能描述:MOSFET N-CH/450V/0.5A/BFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSN1N45BTA | 功能描述:MOSFET N-CH/450V/0.5A/BFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SSN-2025A+ | 制造商:MINI 制造商全稱:Mini-Circuits 功能描述:Frequency Synthesizer |
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