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參數(shù)資料
| 型號： | SSR05C60S.5TXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | SMD.5, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | SSR05C60S.5TXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0016G
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SSR05C __ __ __
│
└ Screening:
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└ Package: D1 = TO-252 (D-Pack)
G = Cerpack
S.5 = SMD.5
S.22 = SMD.22
└ Voltage 50 = 500 V
60 = 600 V
SSR05C60 Series
5 AMP / 600V
SILICON CARBIDE
SCHOTTKY RECTIFIER
Features:
600V Silicon Carbide Schottky Rectifier
New Semiconductor Material
Switching Behavior Benchmark
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over Temperature
Hermetic Packages Available
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
SSR05C50
SSR05C60
VRRM
VRSM
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Io
5
Amps
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO)
IFSM
30
Amps
I2t Value
I2t
0.78
A2s
Power Dissipation
PD
36.5
Watts
Operating & Storage Temperature
Top & Tstg
-55 to +175
C
Maximum Thermal Resistance
Junction to Case
RθJC
4.1
C/W
1
TO-252 (D1)
Cerpack (G)
SMD.5 (S.5)
SMD.22 (S.22)
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