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參數(shù)資料
| 型號(hào)： | SST214 |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HANDLE |
| 中文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-253AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-253, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 512K |
| 代理商： | SST214 |
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Linear Integrated Systems
SD-SST210/214
N-CHANNEL LATERAL
DMOS SWITCH
Product Summary
Features
Ultra-High Speed Switching—
tON
: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed
rDS
@5 V
Low Turn-On Threshold Voltage
N-Channel Enhancement Mode
Benefits
High-Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Applications
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
DAC Deglitchers
High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for
±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and
±
voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage .........................................................
±
40 V
Gate-Substrate Voltage .........................................................................
±
30 V
Drain-Source Voltage
(SD210DE) .......................................30 V
(SD214DE) .......................................20 V
Source-Drain Voltage
(SD210DE) .......................................10 V
(SD214DE) .......................................20 V
Drain-Substrate Voltage
(SD210DE) .......................................30 V
(SD214DE) .......................................25 V
Source-Substrate Voltage
(SD210DE) .......................................15 V
(SD214DE) .......................................25 V
Drain Current........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) .............................300
0
C
Storage Temperature.................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a....................................................................................................................................
300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Part Number
V(BR)DS Min(V)
VGS(th) Max (V)
SD210DE
SD214DE
SST210
SST214
30
20
30
20
1.5
1.5
1.5
1.5
rDS(on) Max(
)
Crss Max (pF)
45 @ VGS = 10V
45 @ VGS = 10V
50 @ VGS = 10V
50 @ VGS = 10V
tON Max (ns)
0.5
2
0.5
2
0.5
2
0.5
2
Top View
SST210 SST214
Top View
SD210DE SD214DE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST215 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED |
| SST215-LF | 制造商:Calogic LLC 功能描述:SST215 Series Fast DMOS FET Switches N-Ch Enhancement-Mode - SOT-143 |
| SST215-T1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-253 |
| SST215X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | CHIP |
| SST215Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 |
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