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參數資料
| 型號： | SSTA28 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | NPN通用型晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | SSTA28 |
SSTA28 / MMSTA28
Transistors
NPN general purpose transistor
1/2
SSTA28 / MMSTA28
z
Features
1) BV
CES
< 80V (Ic=100
μ
A)
z
Package, marking and packaging specifications
Part No.
SSTA28
Packaging type
Marking
Code
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta=25
°
C)
SST3
RAT
T116
3000
MMSTA28
SMT3
RAT
T146
3000
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
80
12
0.3
0.2
150
55 to +150
Unit
V
V
V
A
W
°
C
°
C
z
External dimensions
(Unit : mm)
SSTA28
MMSTA28
ROHM : SST3
JEDEC : SOT-23
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2
±
0
1
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
0
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
2
±
0
1
0
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
0
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
All terminals have same dimensions
All terminals have same dimensions
Parameter
Symbol
BV
CBO
BV
CES
Min.
80
80
12
Typ.
Max.
0.1
0.1
0.5
1.2
1.5
Unit
V
V
V
μ
A
Conditions
BV
EBO
I
CBO
I
BEO
I
CES
V
CE(sat)
1
V
CE(sat)
2
C
O
b
μ
A
μ
A
V
V
I
C
= 100
μ
A
I
C
= 100
μ
A
I
E
= 10
μ
A
V
CB
= 60V
V
EB
= 10V
V
CE
= 10V
I
C
/I
B
= 10mA/10
μ
A
I
C
/I
B
= 100mA/0.1mA
V
CE
/I
B
= 5V/100mA
V
CE
= 5V , I
C
= 10mA
V
CE
= 5V , I
C
= 100mA
V
CE
= 5V , I
E
= 10mA , f = 100MHz
V
CB
= 10V , I
E
= 0 , f = 1MHz
V
BE(on)
1.4
5.0
8.0
2.0
V
0.7
0.8
h
FE
10000
10000
125
f
T
200
MHz
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output Capecitance
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SSTA28_05 | 制造商:ROHM 制造商全稱:Rohm 功能描述:NPN general purpose transistor |
| SSTA28T116 | 功能描述:達林頓晶體管 NPN 80V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| SSTA28T216 | 制造商:ROHM Semiconductor 功能描述: |
| SSTA29 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23 |
| SSTA55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | SOT-23 |
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