- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383840 > STB100NF04LT4 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 100A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | STB100NF04LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 100A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 100號A（丁）|對263AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 144K |
| 代理商： | STB100NF04LT4 |
1/9
January 2002
.
STB100NF03L-03
N-CHANNEL 30V - 0.0026
- 100A D
2
PAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0026
I
LOW THRESHOLD DRIVE
I
100% AVALANCHE TESTED
I
LOGIC LEVEL DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE INTUBE(NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB100NF03L-03
30 V
<0.0032
100 A
1
3
D
2
PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuos) at T
C
= 25
°
C
I
D
(1)
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
(1) Current Limited by Package
(2) Starting T
j
= 25
o
C, I
AR
= 50A, V
DD
= 50V
Parameter
Value
30
30
±
15
100
100
Unit
V
V
V
A
A
400
300
2
1.4
A
W
W/
°
C
J
°
C
°
C
-60 to 175
175
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STB10NA40-1 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-262VAR |
| STB10NA40T4 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB |
| STB10NB20T4 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-263AB |
| STB10NB50T4 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10.6A I(D) | TO-263AB |
| STB10NC50 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB100NF04T4 | 功能描述:MOSFET N-Ch 40 Volt 120 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB100NH02L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 24V - 0.0052ohm - 60A DPAK STripFET⑩ III POWER MOSFET |
| STB100NH02LT4 | 功能描述:MOSFET N-Ch 24 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB101-0.421-34 | 制造商:Lyn-Tron Inc 功能描述: |
| STB101-0.473-31 | 制造商:Lyn-Tron Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。