- 您現在的位置：買賣IC網 > PDF目錄382555 > STB4NC50 (意法半導體) N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET PDF資料下載
參數資料
| 型號： | STB4NC50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道500V - 2.2ohm - 4A條采用D2PAK PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/8頁 |
| 文件大小： | 244K |
| 代理商： | STB4NC50 |
1/8
July 2000
STB4NC50
N-CHANNEL 500V - 2.2
- 4A D2PAK
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 2.2
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
≤
4A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STB4NC50
500V
< 2.7
4 A
Parameter
Value
Unit
500
V
500
V
±30
V
4
A
2.5
A
12
A
80
W
0.64
3.5
W/°C
V/ns
–65 to 150
°C
150
°C
1
3
D
2PAK
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STB4NC60 | INTEGRATED EC000 MPU |
| STB4NC60-1 | INTEGRATED EC000 MPU |
| STB4NC60A-1 | 32BIT MCU,GPT,SIM,QSM |
| STB4NC80ZT4 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
| STB4NC80Z | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB4NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET |
| STB4NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60A-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET |
| STB4NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.2A I(D) | TO-263AB |
| STB4NC80Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
發布緊急采購，3分鐘左右您將得到回復。