- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382555 > STB4NC80Z-1 (意法半導(dǎo)體) N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STB4NC80Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道800V的- 2.4ohm - 4A條TO-220/FP/D2PAK/I2PAK齊保護(hù)的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 526K |
| 代理商： | STB4NC80Z-1 |
1/13
December 2002
STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4
- 4A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected PowerMESHIII MOSFET
(1)I
SD
≤
4A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I
2
PAK
(Tabless TO-220)
1
3
D
2
PAK
I
TYPICAL R
DS
(on) = 2.4
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP4NC80Z/FP
800V
< 2.8
4 A
STB4NC80Z/-1
800V
< 2.8
4 A
Parameter
Value
Unit
STP(B)4NC80Z(-1)
STP4NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 25
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
4
4(*)
A
2.5
2.5(*)
A
Drain Current (pulsed)
16
16(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
100
35
W
0.8
0.28
W/°C
I
GS
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
±50
mA
V
ESD(G-S)
dv/dt(1)
V
ISO
T
stg
T
j
2.5
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB4NK60ZT4 | N-CHANNEL 600V - 1.76 OHM - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET |
| STP4NK60ZFP | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB4NK60Z-1 | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD4NK60Z-1 | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STP4NK60Z | N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB4NC80ZT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET |
| STB4NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB4NK60Z_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 1.76 ヘ - 4 A SuperMESH⑩ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP |
| STB4NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB4NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。