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參數資料
型號: STB55NF03L-1
廠商: 意法半導體
英文描述: N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
中文描述: N溝道30V的- 0.01糯- 55A條TO-220/D2PAK/I2PAK STripFET二功率MOSFET
文件頁數: 1/11頁
文件大小: 338K
代理商: STB55NF03L-1
1/11
March 2002
.
STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01
- 55A TO-220/D
2
PAK/I
2
PAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.01
I
OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
I
LOW GATE CHARGE
I
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
LOW VOLTAGE DC-DC CONVERTERS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
HIGH EFFICIENCY SWITCHING CIRCUITS
TYPE
V
DSS
R
DS(on)
I
D
STP55NF03L
STB55NF03L
STB55NF03L-1
30 V
30 V
30 V
<0.013
<0.013
<0.013
55 A
55 A
55 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
I
2
PAK
TO-262
123
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
Parameter
Value
30
30
± 16
55
39
220
80
0.53
-60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
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相關代理商/技術參數
參數描述
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