- 您現在的位置：買賣IC網 > PDF目錄85387 > STB60K620S (SOLID STATE DEVICES INC) 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE PDF資料下載
參數資料
| 型號： | STB60K620S |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 77K |
| 代理商： | STB60K620S |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
79-1000 Volt Bidirectional
Smaller than 60KS200C Types
Hermetically Sealed
Meets all environmental requirements of MIL-PRF-19500
Custom Configurations Available
TX and TXV Screening Available
APPLICATIONS:
Protection of Voltage Sensitive Components
Protection Against Power Interruption
Lightning Protection
STA60K79S thru
STA60K1000S
60,000 WATTS
PEAK PULSE POWER
79 – 1000 VOLTS
HIGH VOLTAGE BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
Maximum Ratings (note 2)
Stand Off Voltage
VRWM
56 - 750
Volts
Steady State Power Dissipation
PD
400
Watts
Peak Pulse Power @ 1.0 msec
PPP
60,000
Watts
Peak Pulse Power and Steady
State Power Derating
SEE GRAPH
Peak Pulse Power and Pulse
Width
SEE GRAPH
Operating and Storage
Temperature
-65°C to +175°C
Note:
SSDI Transient Suppressors offer standard Breakdown Voltage Tolerances
of + 10% (A) and + 5% (B). For other Voltage and Voltage Tolerances,
contact SSDI's Marketing Department
PEAK PULSE POWER VS. TEMPERATURE DERATING CURVE
PEA
K
PU
LS
E
PO
W
E
R
(%
Ra
te
d
2
5
°C
P
ow
er)
AMBIENT TEMPERATURE (
°C)
Package shown is standard configuration. SSDI can custom
design your module with terminals that meet your unique
design criteria. Additionally, SSDI can package these
devices with an irregular footprint or offset mounting
positions. This data sheet is meant to serve as an example of
SSDI's Transient Protection Module Capabilities. For
custom configurations, please contact SSDI's Marketing
Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00014D
DOC
相關PDF資料 |
PDF描述 |
|---|---|
| STB9K62PR | 9000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SB330 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SBAV99LT3 | 0.215 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| SMBG16CA/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG24/51 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB60N03L-10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-262AA |
| STB60N06HDT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STB60N55F3 | 功能描述:MOSFET STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。