- 您現在的位置：買賣IC網 > PDF目錄31378 > STB60K82P (SOLID STATE DEVICES INC) 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE PDF資料下載
參數資料
| 型號： | STB60K82P |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | TVS二極管 - 瞬態電壓抑制 |
| 英文描述： | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 66K |
| 代理商： | STB60K82P |
Designer's Data Sheet
SOLID STATE DEVICES, INC.
FEATURES:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00008C
STA60K7.9P thru
STA60K100P
60,000 WATTS
PEAK PULSE POWER
7.9 - 100 VOLTS
LOW VOLTAGE
BIDIRECTIONAL TRANSIENT
VOLTAGE SUPPRESSOR
7.90-100 Volt Bidirectional
Smaller than Microsemi 60KS200C Types
Hermetically Sealed
Meets all environmental requirements of MIL-PRF-19500
Custom configurations available
TX and TXV Screening Available
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
Protection of Voltage Sensitive Components
Protection Against Power Interuption
Lightning Protection
Steady State Power Dissipation
Stand Off Voltage
5.6-75
V
VRWM
400
W
P
D
Note:
SSDI Transient Suppressors offer standard Breakdown Voltage Tolerances of + 10%
(A) and + 5% (B). For other Voltage and Voltage Tolerances, contact SSDI's Marketing
Department
Peak Pulse Power @ 1.0 msec
P
PP
60,000
RMD
APPLICATIONS:
Peak Pulse Power and Steady State
Power Derating
Peak Pulse Power and Pulse Width
W
See Graph
-65
°C to +175°C
Package shown is standard configuration. SSDI can
custom design your module with terminals that meet
your unique design criteria. Additionally, SSDI can
package these devices with an irregular footprint or offset
mounting positions. This data sheet is meant to serve as
an example of SSDI's Transient Protection Module
Capabilities. For custom configurations, please contact
SSDI's Marketing Department.
AMBIENT TEMPERATURE (
°C)
PEAK PULSE POWER VS. TEMPERATURE DERATING CURVE
PEAK
PULSE
POWER
(%
Rated
25
°C
Power)
MMAXIMUM RATINGS
相關PDF資料 |
PDF描述 |
|---|---|
| STB60K10.7P | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K68P | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K57P | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K34P | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K11P | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB60N03L-10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-262AA |
| STB60N06HDT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STB60N55F3 | 功能描述:MOSFET STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。