- 您現在的位置：買賣IC網 > PDF目錄299944 > STB80NE03L-06 (意法半導體) N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET) PDF資料下載
參數資料
| 型號： | STB80NE03L-06 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET) |
| 中文描述： | N溝道30V的，0.005Ω- 80A條，采用D2PAK STripFETTM功率MOSFET（不適用功率MOSFET的） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 84K |
| 代理商： | STB80NE03L-06 |
STB80NE03L-06
N - CHANNEL 30V - 0.005
- 80A - D2PAK
STripFET
POWER MOSFET
s
TYPICAL RDS(on) = 0.005
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size
”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
July 1998
1
3
D
2PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Volt age (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
)
30
V
VGS
Gat e-source Voltage
± 22
V
ID
Drain Current (continuous) at Tc =25
o C80
A
ID
Drain Current (continuous) at Tc =100
oC60
A
IDM(
)
Drain Current (pulsed)
320
A
Ptot
Tot al Dissipation at Tc =25
oC150
W
Derating F act or
1
W/
oC
dv/dt
Peak Diode Recovery voltage slope
7
V/ ns
Tstg
Storage T emperat ure
-65 to 175
oC
Tj
Max. O perating Junction Temperature
175
oC
(
) Pulse width limited by safe operating area
(1)ISD
≤ 80 A,di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
T YPE
VDSS
RDS(o n)
ID
ST B80NE03L-06
30 V
< 0.006
80 A
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STC9960 | 645 mm2, COPPER ALLOY, WIRE TERMINAL |
| STF-H240IID | T-1 SINGLE COLOR LED ARRAY, RED, 3 mm |
| STHDMI002ABTR | 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PQFP48 |
| STI324000C1-70SP | 4M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88 |
| STI324000C1-80SH | 4M X 32 MULTI DEVICE DRAM CARD, 80 ns, XMA88 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB80NE03L-06_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET |
| STB80NE03L-06-1 | 制造商:STMicroelectronics 功能描述:TRANS MOSFET N-CH 30V 80A 3PIN I2PAK - Rail/Tube |
| STB80NE03L06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-263AA |
| STB80NE03L-06T4 | 功能描述:MOSFET N-Ch 30 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NE06-10 | 功能描述:MOSFET RO 511-STB80NF06 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。