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參數(shù)資料
| 型號(hào)： | STD17N06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 180K |
| 代理商： | STD17N06 |
STD17N05
STD17N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.06
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
December 1996
TYPE
V
DSS
R
DS(on)
< 0.085
< 0.085
I
D
STD17N05
50 V
17 A
STD17N06
60 V
17 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD17N05
STD17N06
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
60
V
V
DGR
50
60
V
V
GS
±
20
17
V
I
D
A
I
D
12
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
68
A
55
W
Derating Factor
0.37
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD17N05-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251 |
| STD17N05L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N05LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17N05T4 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252 |
| STD17N06-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD17N06-1 | 功能描述:MOSFET DISC BY STM 4/01 TO-251 N-CH 60V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD17N06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STD17N06L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N06LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17N06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252 |
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