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參數(shù)資料
| 型號： | STD1NB50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 500V-7.5Ω-1.4A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道500V -7.5Ω- 1.4A的，像是iPak PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 94K |
| 代理商： | STD1NB50 |
STD1NB50
N - CHANNEL 500V - 7.5
- 1.4A - IPAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 7.5
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
FOR SMD DPAK VERSIONCONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
±
36
V
V
GS
V
I
D
1.4
A
I
D
0.91
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
5.6
A
P
tot
45
W
Derating Factor
0.36
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
3.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
1.4A,di/dt
≤
150 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 9
I
D
STD1NB50
500V
1.4 A
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1/8
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PDF描述 |
|---|---|
| STD1NB60 | N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
| STD1NB80-1 | N-Channel 800V-16Ω-1A- IPAK PowerMESH MOSFET(N溝道MOSFET) |
| STD1NC40-1 | N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| STD1NC60 | N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NB50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR MOSFET D-PAK |
| STD1NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
| STD1NB60-1 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB60T4 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET |
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