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參數(shù)資料
| 型號： | STD2NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
| 中文描述： | ? -頻道800V的- 4.6歐姆- 1.9A -像是iPak / MOSFET的DPAK封裝PowerMESH |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 92K |
| 代理商： | STD2NB80 |
STD2NB80
N - CHANNEL 800V - 4.6
- 1.9A - IPAK/DPAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 4.6
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL (2500UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
800
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
±
30
1.9
V
A
1.2
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
7.6
A
55
W
Derating Factor
0.44
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
o
C
(
1
) I
SD
≤
2A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
800 V
R
DS(on)
< 6.5
I
D
STD2NB80
1.9 A
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/9
相關PDF資料 |
PDF描述 |
|---|---|
| STD2NC40 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC45-1 | N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
| STQ1NC45R | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| STQ1NC45 | N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NB80-1 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NC40 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC45-1 | 功能描述:MOSFET N-Ch, 450V-4.1ohms 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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