- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382557 > STD2NC70Z-1 (意法半導(dǎo)體) N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET PDF資料下載
參數(shù)資料
| 型號： | STD2NC70Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 4.1ohm - 2.3a作出的DPAK /像是iPak齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 447K |
| 代理商： | STD2NC70Z-1 |
1/10
April 2001
STD2NC70Z
STD2NC70Z-1
N-CHANNEL 700V - 4.1
- 2.3A DPAK/IPAK
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 4.1
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
I
GS
Gate-source Current (DC)
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD2NC70Z
STD2NC70Z-1
700V
700V
< 4.7
< 4.7
2.3 A
2.3 A
Parameter
Value
Unit
700
V
700
V
± 25
V
2.3
A
1.45
A
9.2
A
55
W
0.44
W/°C
±50
mA
1.5
KV
3
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
2.3A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
DPAK
3
2
1
1
3
IPAK
(Add Suffix “T4” for Tape & Reel)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD2NK60Z | Zener-Protected SuperMESH MOSFET |
| STD2NK60Z-1 | Zener-Protected SuperMESH MOSFET |
| STF2NK60Z | Zener-Protected SuperMESH MOSFET |
| STP2NK60Z | Zener-Protected SuperMESH MOSFET |
| STQ2NK60ZR-AP | Zener-Protected SuperMESH MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NC70ZT4 | 制造商:STMicroelectronics 功能描述: |
| STD2NK100Z | 功能描述:MOSFET N-Channel 1000V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK60Z | 功能描述:MOSFET N Ch 600V 7.2Ohm 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-7.2ohms 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH? Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。