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參數(shù)資料
| 型號： | STD3NC50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET |
| 中文描述： | ? -頻道500V - 2.4ohm -第3A MOSFET的TO-251/TO-252 PowerMESHII |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 55K |
| 代理商： | STD3NC50 |
STD3NC50
N - CHANNEL 500V - 2.4
- 3A TO-251/TO-252
PowerMESH
ΙΙ
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 2.4
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
NEWHIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL.
DESCRIPTION
The PowerMESH
ΙΙ
is the evolution of the first
generation of MESH OVERLAY
. The layout
refinements
introduced
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
greatly
improve
the
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
500
500
±
30
3.2
2
12.8
60
0.48
4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
3 A, di/dt
≤
100 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 2.7
I
D
STD3NC50
500 V
3 A
1
3
DPAK
TO-252
(Suffix ”T4”)
January 2000
3
2
1
IPAK
TO-251
(Suffix”-1”)
1/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NC50-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.2A I(D) | TO-251AA |
| STD3NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
| STD3NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
| STD3NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3.2A I(D) | TO-252AA |
| STD3NK100Z | 功能描述:MOSFET Hi Vltg NPN Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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