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參數(shù)資料
| 型號(hào)： | STD9NM60 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2A; Tripping Current:4A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.05ohm; Initial Resistance Max:0.125ohm RoHS Compliant: Yes |
| 中文描述： | N溝道600V的0.55歐姆8.3A TO-220/DPAK/IPAK穩(wěn)壓保護(hù)MDMesh功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 337K |
| 代理商： | STD9NM60 |
1/9
TARGET DATA
June 2003
STP9NM60
STD9NM60 - STD9NM60-1
N-CHANNEL 600V - 0.55
- 8.3A TO-220/DPAK/IPAK
Zener-Protected MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 0.55
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
IMPROVED ESD CAPABILITY
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP9NM60
STD9NM60
STD9NM60-1
600 V
600 V
600 V
< 0.60
< 0.60
< 0.60
8.3 A
8.3 A
8.3 A
100 W
100 W
100 W
MARKING
PACKAGE
PACKAGING
STP9NM60
P9NM60
TO-220
TUBE
STD9NM60T4
D9NM60
DPAK
TAPE & REEL
STD9NM60-1
D9NM60
IPAK
TUBE
TO-220
IPAK
DPAK
1
3
3
2
1
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD9NM60-1 | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2.5A; Tripping Current:5A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.035ohm; Initial Resistance Max:0.085ohm RoHS Compliant: Yes |
| STD9NM60T4 | SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes |
| STP9N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| STP9NM60 | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STDELIV | Resettable Fuse; Operating Voltage Max:30V; Resistance:0.05ohm; Holding Current:4A; Tripping Current:8A; Initial Resistance Min:0.01ohm; Mounting Type:Through Hole; Terminal Type:Radial Leaded; Thermistor Tolerance:+/- 5% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD9NM60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STD9NM60N | 功能描述:MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD9NM60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
| STD9OE-3 | 制造商:TE Connectivity 功能描述:718986-000 |
| ST-DA3 | 制造商:Radio Design Labs 功能描述:RDL Distribution Amplifier 制造商:RADIO DESIGN LABS 功能描述:RDL AUDIO DISTRIBUTION AMPLIFIER, POWER REQUIREMENTS: 24-30 VDC FLOATING OR 12-15 VDC BIPOLAR SUPPLY, 50 MA, APPLICATIONS: DISTRIBUTION WITH UP TO 3 OUTPUTS, BRIDGING A LINE FOR LOCAL DISTRIBUTION, DISTRIBUTION WITH IMPEDANCE CONVERS |
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