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參數(shù)資料
| 型號： | STE38N60 |
| 英文描述： | Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:56V RoHS Compliant: Yes |
| 中文描述： | 晶體管| MOSFET功率模塊|獨立| 600V的五（巴西）直| 38A條（丁） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 266K |
| 代理商： | STE38N60 |
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PDF描述 |
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| STE45N50 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 45A I(D) |
| STE47N50 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 47A I(D) |
| STF4045AF | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 36A I(C) |
| STF4045AV | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
| STF4045DF | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STE38NB50 | 功能描述:MOSFET N-Ch 500 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STE38NB50F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET |
| STE400 | 制造商:Thomas & Betts 功能描述:Fittings Connector 4inch Male Aluminum |
| STE4000-25T4MI | 功能描述:鉭質(zhì)電容器-濕式 RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk |
| STE400-100T4KI | 制造商:Vishay Sprague 功能描述:SUPER-TAN LW ESR 400UF 100VDC 10% INSULATED - Bulk |
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